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d a t a sh eet product speci?cation supersedes data of 1997 jan 20 file under discrete semiconductors, sc07 1997 mar 13 discrete semiconductors bsp090 p-channel enhancement mode vertical d-mos transistor
1997 mar 13 2 philips semiconductors product speci?cation p-channel enhancement mode vertical d-mos transistor bsp090 features high speed switching no secondary breakdown very low on-state resistance. applications motor and actuator drivers power management synchronized rectification. description p-channel enhancement mode vertical d-mos transistor in a 4-pin plastic sot223 smd package. caution the device is supplied in an antistatic package. the gate-source input must be protected against static discharge during transport or handling. pinning - sot223 pin symbol description 1 g gate 2 d drain 3 s source 4 d drain fig.1 simplified outline and symbol. handbook, halfpage mam121 4 123 top view s d g quick reference data symbol parameter conditions min. max. unit v ds drain-source voltage (dc) -- 30 v v sd source-drain diode forward voltage i s = - 1.25 a -- 1.3 v v gs gate-source voltage (dc) - 20 v v gsth gate-source threshold voltage i d = - 1 ma; v ds =v gs - 1 - 2.8 v i d drain current (dc) t s = 100 c -- 5.7 a r dson drain-source on-state resistance i d = - 2.8 a; v gs = - 10 v - 0.09 w p tot total power dissipation t s = 100 c - 5w
1997 mar 13 3 philips semiconductors product speci?cation p-channel enhancement mode vertical d-mos transistor bsp090 limiting values in accordance with the absolute maximum rating system (iec 134). notes 1. t s is the temperature at the soldering point of the drain lead. 2. pulse width and duty cycle limited by maximum junction temperature. 3. device mounted on a printed-circuit board with a r th a-tp (ambient to tie-point) of 27.5 k/w. 4. device mounted on a printed-circuit board with a r th a-tp (ambient to tie-point) of 90 k/w. thermal characteristics symbol parameter conditions min. max. unit v ds drain-source voltage (dc) -- 30 v v gs gate-source voltage (dc) - 20 v i d drain current (dc) t s = 100 c; note 1 -- 5.7 a i dm peak drain current note 2 -- 22 a p tot total power dissipation t s = 100 c - 5w t amb =25 c; note 3 - 3.3 w t amb =25 c; note 4 - 1.25 w t stg storage temperature - 65 +150 c t j operating junction temperature - 65 +150 c source-drain diode i s source current (dc) t s = 100 c -- 3.8 a i sm peak pulsed source current note 2 -- 15 a symbol parameter value unit r th j-s thermal resistance from junction to soldering point 10 k/w
1997 mar 13 4 philips semiconductors product speci?cation p-channel enhancement mode vertical d-mos transistor bsp090 fig.2 power derating curve. handbook, halfpage 0 15 p tot (w) 10 5 0 50 100 200 150 t s ( c) mgd716 d = 0.01; t s = 100 c. (1) r dson limitation. fig.3 soar. handbook, halfpage - 10 2 - 10 - 1 - 10 - 1 - 10 - 2 mgd727 - 10 - 1 - 1 v ds (v) i d (a) - 10 - 10 2 (1) t p = 10 m s 50 m s 100 m s 1 ms dc 10 ms 100 ms t p t p t p t t d =
1997 mar 13 5 philips semiconductors product speci?cation p-channel enhancement mode vertical d-mos transistor bsp090 characteristics t j =25 c; unless otherwise speci?ed. symbol parameter conditions min. typ. max. unit v (br)dss drain-source breakdown voltage v gs = 0; i d = - 10 m a - 30 -- v v gsth gate-source threshold voltage v gs =v ds ; i d = - 1ma - 1 -- 2.8 v i dss drain-source leakage current v gs = 0; v ds = - 24 v --- 500 na i gss gate leakage current v gs = 20 v; v ds =0 -- 100 na r dson drain-source on-state resistance v gs = - 4.5 v; i d = - 1.4 a -- 0.15 w v gs = - 10 v; i d = - 2.8 a -- 0.09 w c iss input capacitance v gs = 0; v ds = - 24 v; f = 1 mhz - 800 - pf c oss output capacitance v gs = 0; v ds = - 24 v; f = 1 mhz - 400 - pf c rss reverse transfer capacitance v gs = 0; v ds = - 24 v; f = 1 mhz - 100 - pf q g total gate charge v gs = - 10 v; v dd = - 15 v; i d = - 2.8 a; t amb =25 c - 21 - nc q gs gate-source charge v gs = - 10 v; v dd = - 15 v; i d = - 2.8 a; t amb =25 c - 2.5 - nc q gd gate-drain charge v gs = - 10 v; v dd = - 15 v; i d = - 2.8 a; t amb =25 c - 6 - nc t d(on) turn-on delay time v gs =0to - 10 v; v dd = - 15 v; i d = - 1 a; r l =15 w ; r gen =6 w - 6 - ns t r rise time v gs =0to - 10 v; v dd = - 15 v; i d = - 1 a; r l =15 w ; r gen =6 w - 6 - ns t on turn-on switching time v gs =0to - 10 v; v dd = - 15 v; i d = - 1 a; r l =15 w ; r gen =6 w - 12 25 ns t d(off) turn-off delay time v gs = - 10 to 0 v; v dd = - 15 v; i d = - 1 a; r l =15 w ; r gen =6 w - 55 - ns t f fall time v gs = - 10 to 0 v; v dd = - 15 v; i d = - 1 a; r l =15 w ; r gen =6 w - 40 - ns t off turn-off switching time v gs = - 10 to 0 v; v dd = - 15 v; i d = - 1 a; r l =15 w ; r gen =6 w - 95 190 ns source-drain diode v sd source-drain diode forward voltage v gd = 0; i s = - 1.25 a --- 1.3 v t rr reverse recovery time i s = - 1.25 a; di/dt = 100 a/ m s - 70 - ns
1997 mar 13 6 philips semiconductors product speci?cation p-channel enhancement mode vertical d-mos transistor bsp090 fig.4 switching time test circuit; input and output waveforms. handbook, full pagewidth mgd391 10 % 90 % v in v out t d(on) t on t off t r t f t d(off) 10 % 90 % 10 % 90 % 0 0 - v dd r l v out v in fig.5 transient thermal resistance from junction to soldering point as a function of pulse time; typical values. handbook, full pagewidth 1 10 2 10 - 1 10 - 5 10 - 4 10 - 3 10 - 1 10 - 2 t p (s) 110 10 r th j - s (kw) t p t p t p t t d = mgd728 d = 0.75 0.5 0.33 0.2 0.1 0.05 0.01 0 0.02
1997 mar 13 7 philips semiconductors product speci?cation p-channel enhancement mode vertical d-mos transistor bsp090 fig.6 capacitance as a function of drain-source voltage; typical values. v gs = 0; f = 1 mhz; t j =25 c. (1) c iss . (2) c oss . (3) c rss . handbook, halfpage 0 - 8 (1) (2) (3) - 16 v ds (v) - 24 2000 c (pf) 1500 500 0 1000 mgd729 fig.7 output characteristics; typical values. t amb =25 c; t p =80 m s; d =0. handbook, halfpage 0 - 4 i d (a) - 8 v ds (v) - 12 - 25 0 - 20 - 3.5 v - 2.5 v - 15 - 10 - 5 mgd730 v gs = - 10 v - 6 v - 5 v - 4.5 v - 3 v - 4 v fig.8 transfer characteristics; typical values. v ds = - 10 v; t amb =25 c; t p =80 m s; d =0. handbook, halfpage 0 - 30 - 20 - 10 0 - 2 i d (a) - 4 - 8 - 6 v gs (v) mgd731 fig.9 gate-source voltage and drain-source voltage as a function of total gate charge; typical values. v dd = - 15 v; i d = - 2.8 a; t amb =25 c. handbook, halfpage 0 - 12 - 8 - 4 0 10 v gs (v) v gs - 18 - 12 - 6 0 v ds (v) 20 q g (nc) 30 mgd732 v ds
1997 mar 13 8 philips semiconductors product speci?cation p-channel enhancement mode vertical d-mos transistor bsp090 fig.10 source current as a function of source-drain diode forward voltage; typical values. v gd =0. (1) t amb = 150 c; t p =80 m s; d =0. (2) t amb =25 c; t p =80 m s; d =0. (3) t amb = - 65 c; t p =80 m s; d =0. handbook, halfpage 0 - 16 - 12 - 8 - 4 0 - 0.5 i s (a) - 1.5 - 2.0 - 1.0 (1) (2) (3) v sd (v) - 2.5 mgd733 fig.11 drain-source on-state resistance as a function of gate-source voltage; typical values. t amb =25 c; t p =80 m s; d =0. v ds 3 i d r dson . handbook, halfpage - 10 0 r dson (m w ) - 2 - 4 - 6 - 8 v gs (v) 10 3 10 2 10 mgd734 i d = 100 ma 500 ma 1.4 a 2.8 a 5.5 a 10 a 15 a 22 a fig.12 temperature coefficient of gate-source threshold voltage as a function of junction temperature; typical values. v gsth at v ds =v gs ; i d = - 1 ma. k v gsth at t j v gsth at 25 c -------------------------------------- = handbook, halfpage - 75 175 1.2 0.7 0.8 0.9 1.0 1.1 - 25 25 k 75 125 t j ( c) mgd735 handbook, halfpage 1.8 0.6 1.0 1.4 mgd736 - 75 175 - 25 25 (2) k 75 125 t j ( c) (1) fig.13 temperature coefficient of drain-source on-resistance as a function of junction temperature; typical values. (1) r dson at v gs = - 10 v; i d = - 2.8 a. (2) r dson at v gs = - 4.5 v; i d = - 1.4 a. k r dson at t j r dson at 25 c ----------------------------------------- =
1997 mar 13 9 philips semiconductors product speci?cation p-channel enhancement mode vertical d-mos transistor bsp090 package outline fig.14 sot223. dimensions in mm. handbook, full pagewidth 6.7 6.3 0.95 0.85 2.3 0.80 0.60 4.6 3.1 2.9 3.7 3.3 7.3 6.7 a b 0.2 a 1.80 max 16 16 o max 10 o max 0.10 0.01 0.32 0.24 4 123 msa035 - 1 (4x) 0.1 b m m s seating plane 0.1 s o
1997 mar 13 10 philips semiconductors product speci?cation p-channel enhancement mode vertical d-mos transistor bsp090 definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation.
1997 mar 13 11 philips semiconductors product speci?cation p-channel enhancement mode vertical d-mos transistor bsp090 notes
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